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Pt常被用来在金属氧化物半导体上做肖特基接触 .在常温下 ,Pt/ Ti O2 界面处的电子电导对 Pt/ Ti O2 肖特基势垒高度的变化非常敏感 .本文描述了利用该性质制造的湿敏传感器的性能 ,并讨论了因水在 Pt/ Ti O2 界面处的化学吸附 ,引起表面态费米能级改变 ,影响 Pt/Ti O2 肖特基势垒的高度 ,从而导致了 I- V曲线的变化的物理过程 ,对器件制造过程中的工艺问题也有所论述
Pt is often used to make Schottky contacts on metal oxide semiconductors.At normal temperature, the electron conductance at the Pt / Ti O2 interface is very sensitive to the Pt / Ti O2 Schottky barrier height change.This paper describes the use of The properties of the humidity sensor fabricated by this property are discussed. It is also discussed that due to the chemical adsorption of water at the Pt / Ti O2 interface, the Fermi level in the surface state is changed, which affects the height of the Pt / Ti O2 Schottky barrier, resulting in I-V curve of the physical changes in the process of device manufacturing process also discussed the issue