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利用等离子体增强化学气相沉积法制备Si-rich SiNx/N-rich SiNy多层膜,分别使用热退火和激光辐照技术对多层膜进行退火,以构筑三维限制、尺寸可控、有序的硅纳米晶.实验结果表明,经退火后,纳米硅晶粒在Si-rich SiNx子层内形成,其尺寸可由Si-rich SiNx子层厚度调控.实验还发现,激光辐照技术相比于热退火能更有效地改善多层膜的微结构,提高多层膜的晶化率,以激光技术诱导晶化的Si-rich SiNx/N-rich SiNy多层膜作为有源层构建电致发光器件,在室温下观察到了增强的电致可见发光,并且发光效率较退火前提高了40%以上.
Si-rich SiNx / N-rich SiNy multilayers were prepared by plasma-enhanced chemical vapor deposition. The multilayers were annealed by thermal annealing and laser irradiation respectively to construct three-dimensional constrained, controlled and ordered The results show that after annealing, the nano-silicon grains are formed in the Si-rich SiNx sublayer and the size can be controlled by the thickness of the Si-rich SiNx sublayer.It is also found that compared with the heat Annealing can effectively improve the microstructure of the multi-layer film and improve the crystallization rate of the multi-layer film. The laser-induced Si-rich SiNx / N-rich SiNy multilayer film is used as the active layer to construct the electroluminescent device , Enhanced electrochemically visible luminescence was observed at room temperature and the luminous efficiency was improved by more than 40% compared to that before annealing.