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采用直流等离子体化学气相沉积技术,在高速钢、Si(100)和Si(111)基体上沉积TiN膜,并对膜的晶体结构、表面形貌、断口结构、显微硬度、氯含量等进行了测定和分析,部分样品进行了二次离子质谱(SIMS)、Auger谱(AES)和X光光电子谱(ESCA)等分析.试验表明:在不同基材上沉积的TiN膜,只要沉积参数相同,膜的结构和性能都相同.在沉积温度500℃左右,TiN膜的生长方式有一转变,即可能是由层生长转变为岛状生长.直流PCVD法生成的TiN膜,其N:Ti≈1:1,有强的(200)织构,膜与基体间有较宽的共混区,因而结合强度高和耐磨性好,适于用作耐磨镀层.
The TiN films were deposited on high speed steel, Si (100) and Si (111) substrates by DC plasma CVD, and the crystal structure, surface morphology, fracture structure, microhardness, (SIMS), Auger spectrum (AES) and X-ray photoelectron spectroscopy (ESCA) were used to analyze and analyze some samples.The results show that TiN films deposited on different substrates have the same deposition parameters , The structure and properties of the films are the same.When the deposition temperature is about 500 ℃, there is a change in the growth mode of the TiN film, that is, it may change from layer to island growth.The TiN film generated by the DC PCVD has N: Ti≈1 : 1, there is a strong (200) texture, the film and the substrate has a wide range of blending zone, so the combination of high strength and good wear resistance, suitable for wear-resistant coating.