论文部分内容阅读
用CHF_3反应离子腐蚀除去SiO_2层之后对Si表面的电特性进行了全面的研究。本研究采用了金属-半导体接触结构,并包括金属-半导体接触加热到它的低共熔温度之后的结果。结论是,用CHF_3腐蚀之后Si表面有被俘获的正电荷,部分正电荷可以通过把金属-半导体接触加热到它的低共熔温度后去除。
The electrical properties of the Si surface have been extensively studied after removing the SiO 2 layer by CHF 3 reactive ion etching. The study used metal-semiconductor contact structures and included the results of metal-semiconductor contact heating to its eutectic temperature. The conclusion is that there is a positive charge trapped on the Si surface after etching with CHF 3, and a part of the positive charge can be removed by heating the metal-semiconductor contact to its eutectic temperature.