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Developing an electrostatic discharge(ESD) protection device with a better latch-up immunity has been a challenging issue for the nanometer complementary metal-oxide semiconductor(CMOS) technology. In this work, an improved grounded-gate N-channel metal-oxide semiconductor(GGNMOS) transistor triggered silicon-controlled rectifier(SCR)structure, named GGSCR, is proposed for high holding voltage ESD protection applications. The GGSCR demonstrates a double snapback behavior as a result of progressive trigger-on of the GGNMOS and SCR. The double snapback makes the holding voltage increase from 3.43 V to 6.25 V as compared with the conventional low-voltage SCR. The TCAD simulations are carried out to verify the modes of operation of the device.
Developing this electrostatic discharge (ESD) protection device with a better latch-up immunity has been a difficult issue for the nanometer complementary metal-oxide semiconductor (CMOS) technology. In this work, an improved grounded-gate N-channel metal-oxide semiconductor The GGSCR demonstrates a double snapback behavior as a result of a progressive trigger-on of the GGNMOS and SCR. The double (GGNMOS) transistor triggered silicon-controlled rectifier (SCR) structure, named GGSCR, is proposed for high holding voltage ESD protection applications. snapback makes the holding voltage increase from 3.43 V to 6.25 V as compared with the conventional low-voltage SCR. The TCAD simulations are carried out to verify the modes of operation of the device.