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0.1电子伏HgCdTe光导器件的研制进展使D~*和响应率的性能在宽的温度范围内接近由俄歇复合理论预测的理论热极限,同时显著地改善了1/f噪声、阵列的均匀性和烘烤稳定性。简单的俄歇理论亦说明了70 K以上所测得的产生复合噪声随温度的变化。
Advances in the development of 0.1-volt HgCdTe photoconductive devices have made the performance of D * and responsivity close to the theoretical thermal limit predicted by Auger recombination over a wide temperature range while significantly improving 1 / f noise, array uniformity And baking stability. The simple Auger's theory also shows the temperature dependence of the resulting composite noise over 70 K.