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在减压化学汽相淀积反应器中,用650～700℃的温度范围和0.2～0.6乇的压力范围,采用正硅酸乙酯和磷酸三甲脂在氧气中的热分解,淀积了膜厚和含磷量均匀的磷硅玻璃膜。将含磷量为7％(重量)的磷硅玻璃膜在1,000℃以下的含磷气氛中进行熔融处理,使磷硅玻璃产生流动,获得了台阶坡度小于40°的平坦表面,较好地解决了铝膜的台阶复盖问题。本文描述了磷硅玻璃膜的制备,磷硅玻璃流动的机理,最佳回流条件的选择及磷硅玻璃回流技术在MOS器件中的实际应用。
In a reduced-pressure chemical vapor deposition reactor, a film was deposited by thermal decomposition of tetraethyl orthosilicate and trimethylphosphate in oxygen at a temperature in the range of 650 to 700 ° C and a pressure in the range of 0.2 to 0.6 Torr Phosphorus silicate glass film with uniform thickness and phosphorus content. A phosphorous silicate glass film containing 7% by weight of phosphorus is subjected to a melting treatment in a phosphorous-containing atmosphere at a temperature of 1,000 ° C or below to flow the phosphosilicate glass to obtain a flat surface with a step gradient of less than 40 °, which is better solved Aluminum steps to cover the issue. This paper describes the preparation of phosphosilicate glass, the flow mechanism of phosphosilicate glass, the choice of the best reflow conditions and the practical application of phosphosilver glass reflow technology in MOS devices.