【摘 要】
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The effects of dry O2 post oxidation annealing (POA) at different temperatures on SiC/SiO2 stacks are comparatively studied in this paper.The results show inter
【机 构】
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Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chi
论文部分内容阅读
The effects of dry O2 post oxidation annealing (POA) at different temperatures on SiC/SiO2 stacks are comparatively studied in this paper.The results show interface trap density (Dit) of SiC/SiO2 stacks,leakage current density (Jg),and time-dependent dielectric breakdown (TDDB) characteristics of the oxide,are affected by POA temperature and are closely correlated.Specifically,Dit,Jg,and inverse median lifetime of TDDB have the same trend against POA temperature,which is instructive for SiC/SiO2 interface quality improvement.Moreover,area dependence of TDDB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TDDB Weibull curves.
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