论文部分内容阅读
本文报道了用常规管式炉30秒钟快速热退火代替常规热合金化做Al-Si欧姆接触的简捷方法.通过俄歇电子能谱、扫描电子显微镜、接触电阻率和PN结反向电流的研究证实该法能有效地抑制导致浅结器件失效的Al-Si互扩散现象,从而达到保持良好结特性的欧姆接触.
In this paper, a simple and rapid method of rapid thermal annealing in a conventional tube furnace for 30 seconds instead of the conventional thermal alloying was reported. The properties of Al-Si ohmic contact were investigated by Auger electron spectroscopy, scanning electron microscopy, contact resistivity and PN junction reverse current The results show that the proposed method can effectively suppress the mutual diffusion of Al-Si, which leads to the failure of shallow junction devices, and achieve ohmic contacts with good junction characteristics.