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引入N原子周围In原子数r自建模型,研究退火对GaInNAs/GaAs量子阱能带结构和应变效应的影响,计算退火前后量子阱的光增益谱,讨论了退火温度和量子阱阱宽对光增益峰值蓝移的影响。结果表明退火使带隙发生蓝移,光增益峰值向短波方向移动,退火温度T越高,相同组分条件下的峰值蓝移越大。减小合金中N含量以及增加量子阱阱宽可减少增益峰值蓝移,从而降低退火带来的不利影响。
The influence of annealing on the band structure and strain effect of GaInNAs / GaAs quantum wells was investigated. The optical gain spectra of quantum wells before and after annealing were calculated. The effects of annealing temperature and quantum well width Effect of gain peak blue shift. The results show that annealing makes the bandgap blue-shift and the peak of optical gain moves in the direction of shortwave. The higher the annealing temperature T, the larger the blue shift of the peak under the same composition. Reducing the N content in the alloy and increasing the well width of the quantum well reduce the blue-shift of the gain peak, thereby reducing the adverse effect of annealing.