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本文用ＭｏｎｔｅＣａｒｌｏ方法模拟了１－１０ｋｅＶ的入射电子与固体Ｓｉ的相互作用，在模拟中还对体内的二次电子进行跟踪。对出射二次电子在样品表面的分布进行了多重分形研究。随入射电子能量增大，多重分形谱高度下降，多重分形谱主要向低奇异指数方向扩展。
In this paper, the Monte Carlo method is used to simulate the interaction of incident electrons with solid Si at 1 to 10 keV. The secondary electrons in the body are also tracked in the simulation. A multifractal study on the distribution of outgoing secondary electrons on the sample surface was performed. With the increase of incident electron energy, the multifractal spectrum decreases highly, and the multifractal spectrum expands mainly to the low singularity index.