,Electrically and Optically Bistable Operation in an Integration of a 1310 nm DFB Laser and a Tunnel

• 作 者: Ya-Jie Li Jia-Qi Wang Lu Guo Guang-Can Chen Zhao-Song Li Hong-Yan Yu Xu-Liang Zhou Huo-Lei Wang Wei-Xi Chen Jiao-Qing Pan
• 机 构: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of S
• 出 处: 中国物理快报（英文版）
• 发表日期: 2018年4期

We experimentally demonstrate an InP-based hybrid integration of a single-mode DFB laser emitting at around 1310 nm and a tunneling diode.The evident negative differential resistance regions are obtained in both electrical and optical output characteristics.The electrical and optical bistabilities controlled by the voltage through the tunneling diode are also measured.When the voltage changes between 1.46 V and 1.66 V,a 200-mV-wide hysteresis loop and an optical power ON/OFF ratio of 17dB are obtained.A side-mode suppression ratio of the integrated device in the ON state is up to 43dB.The tunneling diode can switch on/off the laser within a very small voltage range compared with that directly controlled by a voltage source.