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采用镓自助熔剂的方法生长出了UFeGa5单晶,采用X射线衍射技术和Rietveld方法对UFeGa5晶体结构进行了研究。结果表明:生长出的UFeGa5单晶体结构完整,结晶性好。UFeGa5具有HoCoGa5型四方结构,空间群为P4/mmm(No.123),其晶格常数为a=0.42533(2)nm,c=0.67298(3)nm,并得到了透射电镜(TEM)实验验证。
UFeGa5 single crystals were grown by gallium self-flux method. The crystal structure of UFeGa5 was studied by X-ray diffraction and Rietveld method. The results show that the grown UFeGa5 single crystal has a complete structure and good crystallinity. UFeGa5 has a HoCoGa5-type tetragonal structure with a space group of P4 / mmm (No.123) with lattice constants of a = 0.42533 (2) nm and c = 0.67298 (3) nm and has been verified by transmission electron microscopy .