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为制备高雾度、高透过和高导电透明导电薄膜玻璃,采用常压CVD法在硼硅玻璃基板上分别以单丁基三氯化锡(MBTC)为前驱物、三氟乙酸(TFA)为掺杂剂、去离子水为催化剂,制备了Sn O_2:F透明导电薄膜。研究了不同水用量对薄膜雾度的影响,并分析影响雾度变化的机理。结果表明:通过调节水的用量可实现高雾度、高透过和高导电薄膜的生成。随着水用量的增加,薄膜平均晶粒尺寸、结晶度和雾度先增大后减小;当水用量为MBTC摩尔量的1.5倍时,制备出雾度为14.3%、可见光透过率为76.8%、方块电阻为3.2?/□的薄膜。水的加入和用量的调节有效的解决了雾度和透过率之间相互影响的难题。
In order to prepare high-haze, high-transmission and high-conductivity transparent conductive thin-film glass, monobutyltin trichloride (MBTC) was used as a precursor and trifluoroacetic acid (TFA) As a dopant, deionized water as a catalyst, prepared Sn O_2: F transparent conductive film. The effects of different amount of water on the film haze were studied, and the mechanism of haze change was analyzed. The results show that high haze, high transmission and high conductivity film can be formed by adjusting the amount of water. With the increase of water content, the average grain size, crystallinity and haze of the film first increase and then decrease; when the amount of water is 1.5 times the MBTC molar amount, the haze is 14.3%, the visible light transmittance is 76.8%, sheet resistance of 3.2? / □ film. The addition of water and dosage regulation effectively solve the problem of interaction between haze and transmittance.