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建立精确的衬底电流模型是分析ＭＯＳＦＥＴ 器件及电路可靠性和进行ＭＯＳＦＥＴ 电路设计所必需的．在分析载流子输运的基础上建立了一个常规结构深亚微米ＭＯＳＦＥＴ 衬底电流的解析模型，模型公式简单．对模型进行了验证，研究了衬底掺杂浓度与栅氧化层厚度对拟合因子的影响，并分析了模型中拟合因子的物理意义．
Establishing an accurate substrate current model is necessary to analyze MOSFET device and circuit reliability and to design MOSFET circuits. Based on the analysis of carrier transport, an analytical model of the current in a deep submicron MOSFET with conventional structure is established. The formula of the model is simple. The model was verified. The effect of substrate doping concentration and gate oxide thickness on the fit factor was studied. The physical meaning of the fit factor in the model was also analyzed.