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使用扩散炉采取低压方法的 CVD 技术与以往常压方法相比,在大直径硅片的装片容量和生长膜的均匀性方面都有提高,对高密度高质量的超大规模集成电路的研制会有很大贡献。表1列出的数据是目前半导体制造工艺采用低压 CVD 装置获得的。但是关于器件工艺中的扩散源、铝布线后的钝化以及多层金属布线的绝缘膜等方面最为需要的低温磷硅玻璃(PSG)膜的生长技术,膜厚及磷浓度(方块电阻)分布的控制是困难的,
Compared with the conventional atmospheric pressure method, the CVD technique using a diffusion furnace to take a low-pressure method has been improved in terms of the capacity of a large-diameter silicon wafer and the uniformity of the growth film. The development of a high-density and high-quality VLSI Have a great contribution. The data listed in Table 1 is obtained by using a low-pressure CVD apparatus for the current semiconductor manufacturing process. However, growth techniques, film thickness, and phosphorus concentration (sheet resistance) distribution of PSG films that are most needed for diffusive sources in device processes, passivation after aluminum wiring, and insulating films for multi-layer metal wiring The control is difficult,