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采用Zn扩散到掺N的n—LPE层内的方法研制了高效率的GaP缘色LED′S(发光二极管)。在8A/cm~2下,封装二极管的平均效率为0.15％在50A/cm~2下,为0.23％。为了获得高效率二极管,在n—LPE层内必须有最适当的N_T浓度和长的少子寿命τ_h。增加N_T浓度直到某一定值,τ_h都始终是一常数。在较高N_T浓度时,τ_h值减小,并正比于N_T~(-2),在低N_T浓度区少子寿命也强烈地依赖于n—LPE层的位错密度。位错小于2×10~(-5)cm~(-2)的晶体,N浓度为～6×10~(17)cm~(-3)。二极管的效率最佳。有一个减少n—LPE层晶体特性劣化的扩散工艺也是很重要的。在最佳磷压下,研制了低温(600～700℃)扩散工艺。
The GaP fringe LED'S (Light Emitting Diode) has been developed by diffusing Zn into n-doped n-LPE layer. At 8A / cm ~ 2, the average efficiency of the packaged diode was 0.15% at 50 A / cm ~ 2, which was 0.23%. In order to obtain a high efficiency diode, there must be the most appropriate N_T concentration in the n-LPE layer and a long minority carrier lifetime τ_h. Increasing the concentration of N_T until a certain value, τ_h is always a constant. At higher N_T concentrations, τ_h decreases and is proportional to N_T ~ (-2). In low N_T concentrations, the minority lifetime also strongly depends on the dislocation density of the n-LPE layer. The crystal with dislocation less than 2 × 10 ~ (-5) cm ~ (-2), the concentration of N is ~ 6 × 10 ~ (17) cm ~ (-3). Diode efficiency is the best. It is also important to have a diffusion process that reduces the deterioration of the n-LPE layer's crystal properties. At the optimum phosphorus pressure, a low temperature (600 ~ 700 ℃) diffusion process was developed.