,Effect of In Composition on Two-Dimensional Electron Gas in Wurtzite AlGaN/InGaN Heterostructures

• 作 者: KIM Bong-Hwan PARK Seoung-Hwan LEE Jung-Hee MOON Yong-Tae
• 机 构: Department of Electronics Engineering,Catholic University of Daegu,Hayang,Kyeongsan,Kyeongbuk 712-70
• 出 处: 中国物理快报（英文版）
• 发表日期: 2010年11期

The effect of In composition on two-dimensional electron gas in wurtzite AIGaN/InGaN heterostructures is theoretically investigated.The sheet carrier density is shown to increase nearly linearly with In mole fraction x,due to the increase in the polarization charge at the AlGaN/InGaN interface.The electron sheet density is enhanced with the doping in the AlGaN layer.The sheet carrier density is as high as 3.7 × 1013 cm-2 at the donor density of 10 x 1018 cm-3 for the HEMT structure with x = 0.3.The contribution of additional donor density on the electron sheet density is nearly independent of the In mole fraction.