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研究发展了用肖特基电容 电压特性数值模拟确定调制掺杂AlxGa1 -xN GaN异质结中极化电荷的方法 .在调制掺杂的Al0 2 2 Ga0 78N GaN异质结上制备了Pt肖特基接触 ,并对其进行了C V测量 .采用三维费米模型对调制掺杂的Al0 2 2 Ga0 78N GaN异质结上肖特基接触的C V特性进行了数值模拟 ,分析了改变样品参数对C V特性的影响 .利用改变极化电荷、n AlGaN层掺杂浓度和肖特基势垒高度对C V曲线不同部分位置和形状影响不同 ,可以精确地求取极化电荷面密度 .通过模拟 ,得到Al0 2 2 Ga0 78N厚度为 45nm的调制掺杂Al0 2 2 Ga0 78N GaN异质结界面附近极化电荷面密度为 6 78× 10 1 2 cm- 2 .
We have developed a method to determine the polarization charge in the modulated AlxGa1-xN GaN heterojunction by numerical simulation of the Schottky capacitance voltage characteristics.Phodration of Pt is carried out on the modulation-doped Al0 2 2 Ga0 78N GaN heterojunction (CV) measurements were carried out.The CV characteristics of Schottky contact on the Al 2 O 2 2 Ga0 78N GaN heterojunction doped with Al 2 O 2 2 Ga0 78N GaN were investigated by using the three-dimensional Fermi model.The effects of changing the sample parameters on the CV Characteristics.Divided polarization charge, n AlGaN doping concentration and Schottky barrier height on the CV curve of different parts of the location and shape of different, can accurately calculate the polarization charge density.Through simulation, Al0 2 2 Ga0 78N Polarized charge density near the surface of a doped Al0 2 2 Ga0 78N GaN heterojunction with a thickness of 45 nm is 6 78 × 10 12 cm -2.