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对SiO2+BPSG+SiO2钝化结构和SiO2+SiN钝化结构的双极晶体管和JW117集成稳压器进行了60Co的γ辐照和不同温度下退火行为研究。结果表明,覆盖BPSG钝化膜的器件抗辐照性能明显强于SiN钝化膜的器件。BPSG对Na+具有很好的吸收作用,SiO2层中的Na+很大部分被吸收到BPSG膜中,降低了双极晶体管基区的表面复合速率,减少过剩基极电流,这可能是BPSG钝化膜器件抗辐照性能好的主要原因。通过对器件辐照后不同温度下的退火实验,保证了BPSG钝化膜器件辐照后的工作可靠性。
The effects of 60Co γ irradiation and annealing at different temperatures on the bipolar transistors of SiO2 + BPSG + SiO2 passivation structure and SiO2 + SiN passivation structure and JW117 integrated voltage regulator were studied. The results show that the device coated with BPSG passivation film is significantly stronger than that of SiN passivation film. BPSG has a good absorption effect on Na +. Most of the Na + in the SiO2 layer is absorbed into the BPSG film, which reduces the surface recombination rate of the base region of the bipolar transistor and reduces the excess base current, which may be the result of BPSG passivation film Device anti-radiation performance is the main reason. Through the annealing of the device at different temperatures after irradiation, the working reliability of the BPSG passivation film device after irradiation is ensured.