Study and optimal simulation of 4H-SiC floating junction Schottky barrier diodes' structures an

• 作 者: 南雅公 蒲红斌 曹琳 任杰
• 机 构: Department of Electric Engineering, Faculty of Automation and Information Engineering, Xi\'an Univ
• 出 处: Chinese Physics B
• 发表日期: 2010年10期
• 关键词: Schottky junction breakdown floating simulator epitaxial drift contradiction fig

This paper stuides the structures of 4H-SiC floating junction Schottky barrier diodes. Some structure parameters of devices are optimized with commercial simulator based on forward and reverse electrical characteristics. Compared with conventional power Schottky barrier diodes, the devices are featured by highly doped drift region and embedded floating junction layers, which can ensure high breakdown voltage while keeping lower specific on-state resistance, and solve the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with optimized structure parameter, the breakdown voltage can reach 4.36 kV and the specific on-resistance is 5.8 mΩ·cm2 when the Baliga figure of merit value of 13.1 GW/cm2 is achieved.

Compared with conventional power Schottky barrier diodes, the devices are featured by highly doped drift regions and embedded floating junction layers, which can ensure high breakdown voltage while keeping lower specific on-state resistance, and solve the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with an optimized structure parameter, the breakdown voltage can reach 4.36 kV and the specific on-resistance is 5.8 mΩ · cm 2 when the Baliga figure of merit value of 13.1 GW / cm 2 is achieved.