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据《科技开发动态》2003年第11期报导.离子注入法制备AIN基稀释磁性半导体薄膜材料是将磁性离子如Mn及Fe、Co或Ni等注入AIN半导体薄膜中,即用离子注入的方法以150～250keV的能量注入磁性离子,然后在850～900℃、NH_3气氛条件下退火处理。DMS离子注入法是通过离子注入,将Fe、Mn、Co或Ni等磁性离子注入AIN基半导体材料中来制备磁性半导体的方法。与其他直接生产技术相比,该成果能够实现较高的离子掺杂浓度,因而可以制备出高居里温度的磁性半导体材料。
According to “Science and Technology Development,” 2003 No. 11. Aion-based preparation of thin film AIN-based thin-film magnetic material is the magnetic ions such as Mn and Fe, Co or Ni, etc. into the AIN semiconductor thin film, that ion implantation method 150 ~ 250keV energy into the magnetic ions, and then annealed at 850 ~ 900 ℃, NH_3 atmosphere conditions. The DMS ion implantation method is a method of preparing a magnetic semiconductor by ion implantation, injecting magnetic ions such as Fe, Mn, Co, or Ni into the AIN-based semiconductor material. Compared with other direct production technology, this achievement can achieve a higher ion doping concentration, which can produce high magnetic Curie temperature semiconductor materials.