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用慢正电子束测量了三种不同生长工艺的MBE GaAs薄膜。结果表明,正电子束发射产额参数F_L能反映薄膜的缺陷状况,结晶完整性差的薄膜其F_L值也较低。同时还发现,掺Si的n型GaAs在约600℃显著分解,该温度明显低于本征GaAs梓品开始分解的温度。
The MBE GaAs films of three different growth processes were measured using a slow positron beam. The results show that the F_ (E) emission yield of normal electron beam can reflect the defect state of the film, and the F_L value of the film with poor crystallinity is also low. It has also been found that the Si-doped n-type GaAs decomposes significantly at about 600 ° C, which is significantly lower than the temperature at which the intrinsic GaAs Zi begins to decompose.