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根据菲涅尔 基尔霍夫衍射公式 ,推导出斜照明接近式光刻系统中硅片表面的光强分布 ,并在几种条件下进行了模拟数值计算 ,分析了斜照技术的实用条件及改善光刻分辨率的效果和应用前景。
According to the Fresnel Kirchhoff diffraction formula, the light intensity distribution of the wafer surface in the oblique illumination proximity lithography system is deduced, and the numerical simulation is carried out under several conditions. The practical conditions of the oblique illumination technique are also analyzed. Effect and Prospect of Improving Lithography Resolution.