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通过作者最近建立的关于GAT器件集电结耗尽层电位分布和电场分布的二维解析模型,定量研究了GAT的基区穿通电压VPI以及GAT的雪崩击穿特性并且解释了该器件实现高击穿电压与高电流增益兼容的实验结果
Based on the recent two-dimensional analytical model of the depletion layer potential distribution and the electric field distribution of collector junctions in GAT devices, the authors have quantitatively studied the avalanche breakdown characteristics of GAT’s base-region pass-through voltage VPI and GAT and explained the high hit Wear voltage and high current gain compatible with the experimental results