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描述了一种内置SRAM的640×480像素矩阵OLED-on-silicon单色微显示电路的设计。像素电流12nA～1.6μA可调。每个像素点面积不超过400μm2,信号最大扫描频率30MHz。采用charteredCMOS0.35μm18V高压工艺仿真设计,成功实现了OLED技术和CMOS工艺的结合。
A design of a 640 × 480 pixel matrix OLED-on-silicon monochrome micro-display circuit with built-in SRAM is described. Pixel current 12nA ~ 1.6μA adjustable. Each pixel area does not exceed 400μm2, the maximum signal scanning frequency of 30MHz. The use of charteredCMOS0.35μm18V high voltage process simulation design, the successful realization of the OLED technology and the combination of CMOS technology.