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在立式冷壁CVD反应器中,用TiCl_4-H_2N_2和TiCl_4-H_2N_2-Ar为反应物源,在YT15硬质合金刀片上淀积TiN涂层。研究了淀积参数对淀积薄膜质量和淀积速率的影响。得到的TiN_x涂层外观光洁,呈金黄色,x为0.8～1.6,淀积速率15～60m~(-6)/h,显微硬度1800～2200HV,淀积反应为扩散过程控制;表观活化能为46.5kJ/mol。实验表明,TiN在冷壁反应器中的淀积速率远大于在热壁反应器中的淀积速率。
In a vertical cold wall CVD reactor, TiN coatings were deposited on YT15 cemented carbide inserts using TiCl4-H2N2 and TiCl4-H2N2-Ar as reactant sources. The effect of deposition parameters on the deposited film quality and deposition rate was investigated. The obtained TiN_x coating has a smooth and golden appearance, with a thickness of 0.8-1.6, a deposition rate of 15-60 m / h and a microhardness of 1800-2200 HV. The deposition reaction is controlled by a diffusion process. Apparent activation Can be 46.5 kJ / mol. Experiments have shown that the deposition rate of TiN in cold wall reactors is much greater than that in hot wall reactors.