In this paper,an ultraviolet C-band laser diode lasing at 277 nm composed of B0.313Ga0.687N/B0.40Ga0.60N QW/QB heterostructure on Mg and Si-doped AlxGa1-xN laye
In recent years,materials and devices operating in the ultraviolet (UV) regime have attracted significant attention and therefore experienced rapid development.
Progress in the design and fabrication of ultraviolet and deep-ultraviolet group Ⅲ-nitride optoelectronic devices,based on aluminum gallium nitride and boron n
Nanocrystalline silicon (nc-Si) thin films have been prepared by a helicon-wave plasma chemical vapour deposition technique on glass-Si substrates. The structur
In this paper,we analytically study the relationship between the coercive field,remnant polarization and the thickness of a ferroelectric material,required for
Thermal diffusivity has been investigated in a manganite thin film La0.6Sr0.4MnO3 by means of transient grating(TG) technique at room temperature. A new method,
To reduce the difficulty of the epitaxy caused by multiple quantum well infrared photodetector (QWIP) with tunnel compensation structure,an improved structure i