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用低温PECVD方法制备出成分连续可交的SiC_xN_y:H薄膜,用FTIR和AES方法分析了薄膜的组分。实验表明FTIR吸收谱可以快速地估计SiC_xN_y:H薄膜中N/N+C的比例,快速灯光退火薄膜的FTIR分析表明用PECVD制作的SiC_xN_y:H薄膜用做硅器件钝化膜具有较好的热稳定性。
SiC_xN_y: H films were prepared by low temperature PECVD method. The films were analyzed by FTIR and AES. Experiments show that the FTIR absorption spectrum can quickly estimate the ratio of N / N + C in SiC_xN_y: H thin films. FTIR analysis of the rapid light annealing films shows that the SiC_xN_y: H thin films fabricated by PECVD have good thermal performance stability.