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对于目前的多层芯片封装和IC卡, 不仅在组装工艺的提高良品率中要求芯片强度高, 而且在封装之后还要求有更好的使用期限。根据更薄晶圆的要求, 引入了消除晶圆减薄引起损伤的各种应力解除方法, 但在应力解除之后的划片中又引起了机械损伤, 通过这些方法不可能使芯片强度达到最大。因此, 我们开发了一种结合减薄前划片(DBG)的等离子蚀刻的应力解除方法。减薄前已完成划片工序的晶圆可在其底面和划切面同时用氟基蚀刻, 从而消除机械损伤。我们已能够通过比较经历过常规应力解除芯片来确认被改进芯片强度的平均、最小、最大值。可以预期这项技术将被用于提高今后将进一步扩展的IC卡(即信用卡, 身份证)的寿命要求。
With current multi-layer chip packages and IC cards, not only is the chip strength required for improved yield of the assembly process, but also better life after package is required. According to the requirements of thinner wafers, various stress relieving methods for eliminating damage caused by wafer thinning have been introduced, but mechanical damage has been caused in the scribe after stress relieving, and it is impossible to maximize the chip strength by these methods. Therefore, we developed a stress relief method for plasma etching combined with thinning front scribe (DBG). Wafers that have been scribed prior to thinning can be simultaneously etched with fluorine based on their bottom and scribe planes to eliminate mechanical damage. We have been able to confirm the average, minimum, maximum values of the improved chip strength by comparing conventional stress relief chips. It is expected that this technology will be used to increase the life expectancy of IC cards (ie credit cards, ID cards) to be further expanded in the future.