论文部分内容阅读
附加磁场的熔体直拉法(MCZ法)是近年开发的一种颇有前途的生长优质硅单晶的新工艺技术。由于磁场抑制了硅熔体中的热对流,减少了熔体的温度波动,因而能减少晶体的生长条纹,降低或控制晶体中的氧含量,提高晶体结构完整性,显著降低单晶硅片的翘曲度,并能拉制高阻硅单晶。从而为超大规模集成电路提供了优质硅材料。本文系统论述了MCZ法的发展历史、方法与原理、工艺与设备、近年的新成果和发展前景。
Magnetron pull-up method (MCZ method) with additional magnetic field is a promising new technology for growing high-quality silicon single crystal developed in recent years. As the magnetic field restrains the convection in the silicon melt and reduces the temperature fluctuation of the melt, it can reduce the growth stripes of the crystal, reduce or control the oxygen content in the crystal, improve the crystal structure integrity, significantly reduce the single crystal silicon wafer Warpage, and can draw high-resistance silicon single crystal. Thus providing high-quality silicon materials for very large scale integrated circuits. This article systematically discusses the MCZ law of development history, methods and principles, technology and equipment, in recent years, new achievements and development prospects.