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研究了直接耦合混合应变量子阱半导体光放大器 SOA 的噪声特性 .实验中测定 SOA在130 m A偏置电流下的噪声指数为 7.7d B,表明应变量子阱结构改善了 SOA的噪声性能 .理论分析指出 ,通过消除 SOA的剩余反射 ,其噪声性能可以得到进一步改善 .
The noise characteristics of a SOA with a direct coupled mixed-strain quantum well semiconductor optical amplifier are investigated.The noise figure of a SOA with a bias current of 130 mA is 7.7 dB, which indicates that the strained quantum well structure improves the noise performance of the SOA. Pointed out that noise performance can be further improved by eliminating the residual reflections of the SOA.