,Characterization of ion irradiated silicon surfaces ablated by laser-induced breakdown spectroscopy

• 作 者: T Iqbal M Abrar M B Tahir M Seemab A Majid S Rafique
• 机 构: Department of Physics, Faculty of Sciences, University of Gujrat, Hafiz Hayat Campus, 50700, Gujrat,
• 出 处: 中国物理B（英文版）
• 发表日期: 2018年8期
• 关键词: ablation Thomson parabola technique four-point probe

Low energy metallic ions, generated by a Q-switched Nd:YAG laser (1064-nm wavelength, 10-mJ energy, 9-nm～12-ns-pulse width, 1011 W/cm2 intensity) irradiated on a silicon substrate to modify various properties, such as electrical, morphological, and structural modifications. Thomson parabola technique is used to calculate the energy of these metallic ions whereas the electrical conductivity is calculated with the help of Four-point probe. Interestingly circular tracks forming chain like damage trails are produced via these energetic ions which are carefully examined by optical microscopy. It is observed that excitation, ionization, and cascade collisions are responsible for surface modifications of irradiated samples. Four-point probe analysis revealed that the electrical conductivity of substrate has reduced with increasing trend of atomic number of irradiated metallic ions (Al, Ti, Cu, and Au). The x-ray diffraction analysis elucidated the crystallographic changes leading to reduction of grain size of N-type silicon substrate, which is also associated with the metallic ions used. The decreasing trend of conductivity and grain size is due to thermal stresses, scattering effect, structural imperfections, and non-uniform conduction of energy absorbed by substrate atoms after the ion irradiation.