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红外传感器依据要求冷却与否分为量子型与热型两种,它们根据各自特点应用于军事及民用领域。为扩大应用范围,加强技术开发。在热型红外传感器中,除热辐射型、集电型外的热电堆型红外传感器由于低成本、低耗电、小型化、轻量化等优点,特别受到关注,尤其是军用装备方面如便携式夜视仪的技术开发等。但此型红外传感器灵敏度低,于是,研究使用Si Ge Au系薄膜材料以及改变纳米点尺寸等方法提高其热电性能,并对同时出现的热电能增高的不重复性进行了分析,确认原因是纳米点尺寸及点间隔长度的影响,为此提出了材料设计的指导方针。
Infrared sensors based on the requirements of the cooling or not divided into two types of quantum and heat, which according to their respective characteristics used in military and civilian fields. To expand the scope of application, strengthen technology development. Among the thermal infrared sensors, thermopile-type infrared sensors other than the heat radiation type and the current collecting type are of particular interest because of their advantages of low cost, low power consumption, miniaturization and weight reduction, and the like, in particular, military equipment such as portable night Visual technology development. However, this type of infrared sensor with low sensitivity, so the study of Si Ge Au thin film materials and change the size of nanodots and other methods to improve its thermoelectric properties, and concurrent thermoelectric power increased non-repeatability were analyzed to confirm the reasons for the nano Point size and the effect of the length of the point spacing, for which the proposed material design guidelines.