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据日本《Semiconductor World》1993年第9期报道,日立中央研究所采用文部省高能物理研究所的同步加速器(SOR),以反射型掩模和X线缩小曝光技术获得16 G DRAM以后的0.07/μm图形。 该实验采用13nmX线。为了获得高反射率需要使用两种折射率不同的交叉叠成的多层膜。该膜为Mo/Si 40层多层膜(6.7nm×40对),在13nm波长下获得60％的反射率。以各向异性于蚀方法将多层膜制成反射型掩模。被掩模反射的X线经凸面、凹面反射镜反射缩小后投影到样片上实现了缩小曝光。掩模与样片间的距离约为250mm,缩小率为1/20。在这次实验中开发了高精度激光干涉计测量系统,既可计测光学波面像差,又可微调密勒位置。以获得高清晰度效果。该实验的目的是为了验证X线缩小曝光的分辨率原理,以推进今后的研究和开发,并进入实用阶段。
According to Japan’s “Semiconductor World” No. 9 of 1993 report, Hitachi Central Research Institute using Synchronous Accelerator (SOR) of the Ministry of Education, Institute of High Energy Physics of the Ministry of Culture, Reflective masks and X-ray narrowing exposure technology to obtain 16 G DRAM 0.07 / μm Graphics. The experiment used 13nmX line. In order to obtain high reflectance, two kinds of cross-laminated multilayer films different in refractive index are needed. The film is a Mo / Si 40 layer multilayer film (6.7 nm x 40 pairs) with 60% reflectance at 13 nm wavelength. The multilayer film is made into a reflective mask by an anisotropic etching method. The mask is reflected by the X-ray convex, concave mirror reflection reduction of the projected onto the sample to achieve a reduced exposure. The distance between the mask and the sample is about 250 mm and the reduction rate is 1/20. In this experiment, we developed a high-precision laser interferometer measurement system, which can measure optical wavefront aberration and fine-tune the Miller position. For high-definition results. The purpose of this experiment is to verify the resolution principle of X-ray reduction exposure in order to promote future research and development and to enter practical phase.