论文部分内容阅读
为了研究金属基复合材料在剧烈塑性变形(SPD)过程中增强颗粒与金属基体的界面连接机制,通过等径角挤扭(ECAP-T)工艺在较低温度下制备块状10wt%SiCP/Al基复合材料,并对经过1、2和4道次ECAP-T变形的SiC颗粒与纯Al之间的界面反应以及元素扩散进行了研究。通过TEM和XPS研究了界面和元素扩散,结果表明:即使在较低的外界制备温度下,Al和SiC颗粒表面的SiO2层也能够发生反应,形成主要由Al2O3组成的界面层。相比理论计算值,ECAP-T变形可以将Al的扩散系数提高约1016倍,增强扩散的原因主要是ECAP-T变形促使界面温度升高,且在铝基体内产生空位、位错和晶界等高密度晶格缺陷。
In order to study the mechanism of interfacial adhesion of metal matrix composites to metal matrix during severe plastic deformation (SPD) process, bulk 10wt% SiCP / Al was prepared by ECAP-T Matrix composites. The interfacial reaction and elemental diffusion between ECAP-T-deformed SiC particles and pure Al after 1, 2 and 4 passes were studied. The interfacial and elemental diffusion were studied by TEM and XPS. The results show that the SiO2 layer on the surface of Al and SiC particles can react to form an interface layer mainly composed of Al2O3, even at lower external preparation temperature. Compared with the theoretical calculation, ECAP-T deformation can increase the diffusion coefficient of Al about 1016 times. The main reason for the enhanced diffusion is that the ECAP-T deformation causes the interface temperature to increase, and vacancies, dislocations and grain boundaries Other high-density lattice defects.