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本文对CMOS数字集成电路提出一种比较简捷和通用的器件设计方法。采用这一方法设计的电路,已经大量用于生产,其中包括采用国际标准的电路。实践表明:该法可以省去设计工作中的繁复计算,并在性能参数方面做到一次试投成功。避免了多次试验改版,给新品研制带来较大的效益。 一、特性方程及其工艺参数 任何复杂的CMOS数字集成电路,都是由基本单元电路组成的。基本单元电路的性能,又取决于MOS晶体管的特性。采用一维模型,MOS晶体管的特性可用下列方程表示:
In this paper, CMOS digital integrated circuits proposed a relatively simple and common method of device design. Circuits designed using this method have been used extensively in production, including circuits using international standards. Practice shows that this method can save the complicated calculation in the design work and make a try on the performance parameters. Avoid repeated trial version, to bring greater benefits to the development of new products. First, the characteristic equation and process parameters Any complex CMOS digital integrated circuits, are composed of the basic unit circuit. The performance of the basic unit circuit, again depends on the characteristics of the MOS transistor. Using a one-dimensional model, the characteristics of a MOS transistor can be expressed by the following equation: