,Discharge simulation and volt-second consumption analysis during ramp-up on the CFETR tokamak

• 作 者: Cheng-Yue Liu Bin Wu Jin-Ping Qian Guo-Qiang Li Ya-Wei Hou Wei Wei Mei-Xia Chen Ming-Zhun Lei Yong Guo
• 机 构: Physics Department, School of Electronic Science&Applied Physics, Hefei University of Technology, He
• 出 处: 中国物理B（英文版）
• 发表日期: 2020年2期
• 关键词: plasma current ramp-up China Fusion Engineering Test Reactor tokamak simulation

The plasma current ramp-up is an important process for tokamak discharge, which directly affects the quality ofthe plasma and the system resources such as volt-second consumption and plasma current profile. The China Fusion Engineering Test Reactor (CFETR) ramp-up discharge is predicted with the tokamak simulation code (TSC). The main plasma parameters, the plasma configuration evolution and coil current evolution are given out. At the same time, the volt-second consumption during CFETR ramp-up is analyzed for different plasma shaping times and different plasma current ramp rates dIP/dt with/without assisted heating. The results show that the earlier shaping time and the faster plasma current ramp rate with auxiliary heating will enable the volt-second to save 5％–10％. At the same time, the system ability to provide the volt-second is probably 470 V·s. These simulations will give some reference to engineering design for CFETR to some degree.