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基于锗硅异质结双极晶体管(SiGe HBT)工艺设计了一款单片集成高增益宽带低噪声放大器(LNA)。该放大器采用复合型电阻负反馈结构,通过调整不同的反馈电阻,同时实现了良好的端口匹配、低噪声系数和高增益等特性,适合于射频或中频信号处理系统。芯片采用板上芯片(COB)方式测试,结果表明:在10～800 MHz工作频带内,单片集成低噪声放大器的噪声系数为1.62～1.90 dB,增益35 dB,输入输出端口反射系数分别小于-16 dB和-13 dB,1 dB压缩点输出功率为13 dBm,工作电流35 mA。单片集成低噪声放大器的芯片面积仅为0.48 mm×0.38 mm。
A monolithically integrated high gain wideband LNA is designed based on the SiGe HBT process. The amplifier uses composite negative feedback structure, by adjusting the different feedback resistors, while achieving good port matching, low noise figure and high gain characteristics, suitable for RF or IF signal processing system. The chip is tested by COB method. The results show that the noise figure of monolithically integrated low noise amplifier is 1.62-1.90 dB and the gain is 35 dB in the 10-800 MHz operating band. The reflection coefficients of input and output ports are less than - 16 dB and -13 dB, 1 dB compression point output power of 13 dBm, operating current 35 mA. The chip area of monolithically integrated low noise amplifier is only 0.48 mm × 0.38 mm.