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众所周知,在混合(或单片的)集成电路中的晶体管结构的失效,大多数是由于不均匀的电流和温度分布的出现而引起的。晶体管结构中均匀电流分布的破坏和热斑(局部范围内发热)的出现的机理包括通过发射极 p-n 结的电流密度对温度的依赖性关系。由于半导体结构参数的相互依赖关系,结构中电流分布的热不稳定性或各种类型的不均匀性中的任何一个都能使电流密度非均匀分布形成和使温度上升。
It is well-known that failure of transistor structures in hybrid (or monolithic) integrated circuits is mostly due to the occurrence of non-uniform current and temperature profiles. The mechanism of the uniform current distribution in transistor structures and the appearance of hot spots (localized area heating) include the dependence of the current density on the temperature through the emitter p-n junction. Due to the interdependence of the structural parameters of the semiconductor, either the thermal instability of the current distribution in the structure or any type of inhomogeneity can cause a non-uniform distribution of current density and raise the temperature.