论文部分内容阅读
,Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field
【机 构】
：
Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Mic
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2016年1期
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