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本文利用近红外光致发光技术测量了ＭＯＣＶＤ生长的Ⅲ－Ⅴ族化合物Ｇａ＿（０．５）Ｉｎ＿（０．５）和ＩｎＰ中的深能级发光，研究了这些深能级发光对激发强度和温度的依赖关系；讨论了Ｇａ＿（０．５）Ｉｎ＿（０．５）Ｐ外延层深能级发光的辐射机理和来源，得出了ＩｎＰ外延层的Ｃ带发光的热激活能。
In this paper, the deep-level luminescence of III-V group Ga 0.5 In 0.5 and InP grown by MOCVD was measured by near-infrared photoluminescence. The effects of these deep level luminescence on the excitation intensity and (0.5) In_ (0.5) P epitaxial layer. The thermal activation energy of C band emission in the InP epitaxial layer was obtained.