论文部分内容阅读
An improved analytical model of the drift field suppressed by the Dember field due to ambipolar diffusion in the p-type quasineutral region (p-QNR) of a forward silicon p-n junction at low injection levels is presented with a good fit to the numerical simulation results.Considering ambipolar transport of both carriers,the diode current in the p-QNR is found to consist of a minority-electron diffusion-current component and majority-hole driftand diffusion-current components,and the Dember field plays a dominant role in balancing all the components mentioned above to keep the current constant.The analytical model is beneficial to completely understand ambipolar current transport mechanisms in semiconductor p-n junction devices.