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在室温条件下,用电化学沉积方法在铟锡氧化物(ITO)基底表面生长CdSe纳米棒阵列,并利用X射线衍射(XRD)、能量色散X射线(EDX)、场发射扫描电子显微镜(FESEM)和紫外-可见吸收光谱(UV-Vis)表征CdSe纳米棒阵列的晶体结构和表面形貌,考察其光电化学性能;在标准三电极体系下,测试CdSe纳米棒阵列电极的光电化学性能.结果表明:样品沿[001]方向择优生长,并具有明显的光响应特性;在光强为100 mW/cm~2的模拟太阳光照射下,该电极光电流密度Jsc=2.93 mA/cm~2,开路电压Voc=1.16 V,填充因子FF=0.278,该电池的光电转化效率η=0.947%.
CdSe nanorod arrays were grown on indium tin oxide (ITO) substrates by electrochemical deposition at room temperature. The structures of the CdSe nanorods were characterized by XRD, EDX and FESEM ) And UV-Vis were used to characterize the photonic-electrochemical properties of CdSe nanorod arrays. The photochemical properties of CdSe nanorod arrays were measured under a standard three-electrode system. Results The results show that the sample preferentially grows along [001] direction and has obvious photoresponse characteristics. The photocurrent density Jsc of the sample is 2.93 mA / cm ~ 2 under the simulated sunlight of 100 mW / cm2, Open circuit voltage Voc = 1.16 V, fill factor FF = 0.278, the photoelectric conversion efficiency of the battery η = 0.947%.