Improvements on high voltage capacity and high temperature performances of Si-based Schottky potenti

• 作 者: 王永顺 芮丽 安恒心 汪再兴 刘春娟
• 机 构: School of Electronic and Information Engineering, Lanzhou Jiaotong University,
• 出 处: Journal of Semiconductors
• 发表日期: 2015年02期
• 关键词: Schottky junction sputtering leakage breakdown conduction epitaxial doping impla

In order to improve the reverse voltage capacity and low junction temperature characteristics of the traditional silicon-based Schottky diode,a Schottky diode with high reverse voltage capacity and high junction temperature was fabricated using ion implantation,NiPt60 sputtering,silicide-forming and other major technologies on an N-type silicon epitaxial layer of 10.6-11.4μm and(2.2-2.4)×10~(15) cm~(-3) doping concentration.The measurement results show that the junction temperature of the Schottky diode fabricated can reach 175 °C,that is 50°C higher than that of the traditional one;the reverse voltage capacity V_R can reach 112 V,that is 80 V higher than that of the traditional one;the leakage current is only 2μA and the forward conduction voltage drop is V_F=0.71 V at forward current I_f =3 A.

In order to improve the reverse voltage capacity and low junction temperature characteristics of the traditional silicon-based Schottky diode, a Schottky diode with high reverse voltage capacity and high junction temperature was fabricated using ion implantation, NiPt60 sputtering, silicide-forming and other major technologies on an N-type silicon epitaxial layer of 10.6-11.4 μm and (2.2-2.4) × 10-15 cm -3. The measurement results show that the junction temperature of the Schottky diode fabricated can reach 175 ° C, that is 50 ° C higher than that of the traditional one; the reverse voltage capacity V_R can reach 112 V, that is 80 V higher than that of the traditional one; the leakage current is only 2μA and the forward conduction voltage drop is V_F = 0.71 V at forward current I_f = 3 A.