论文部分内容阅读
通过用电化学法预先沉积一层碳膜的方法，利用热丝化学汽相沉积法使金刚石在光滑硅片上的成核密度达到１０７ｃｍ－２左右，与未镀碳膜相比提高了近３个数量级。文中还分析了可能的原因。
By pre-depositing a layer of carbon film by the electrochemical method, the nucleation density of the diamond on the smooth silicon wafer is about 107cm-2 by using the hot filament chemical vapor deposition method, which is increased by nearly 3 compared with that of the uncoated carbon film A few orders of magnitude. The article also analyzes the possible causes.