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简要介绍了集成电路互连线建模发展的历史。回顾了曾广泛使用的一维电迁移引起的回流模型。基于原子通量散度的概念,电迁移建模可以分为两种方法。一种是常用的扩散路径法,该方法能够解释传统的铝片上金属互连的许多重要电迁移现象。然而,随着芯片尺寸越来越小,工业界为了追求更好的性能,转向了使用铜/低k组合作为互连材料,同时引进了三维集成电路技术。顺应这种趋势,第二种驱动力电迁移建模方法发展了起来,该方法有助于人们理解窄互连工艺中的许多现象。有限元模拟也越来越多地用于驱动力分析法。
Briefly introduces the history of the development of integrated circuit interconnection modeling. The widely used one-dimensional electromigration-induced backflow model is reviewed. Based on the concept of atomic flux divergence, electromigration modeling can be divided into two approaches. One is a common diffusion path method that can account for many of the important electromigration phenomena of metal interconnects on traditional aluminum wafers. However, with smaller and smaller chips, the industry has turned to the use of copper / low-k combinations as interconnect materials in pursuit of better performance, along with the introduction of three-dimensional integrated circuit technology. In keeping with this trend, a second driving force electromigration modeling approach has developed that helps to understand many of the phenomena of narrow interconnection processes. Finite element simulation is also increasingly used in driving force analysis.