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采用射频磁控溅射技术在Si(111)衬底上生长ZnO基陶瓷薄膜,分别在650℃,750℃,850℃和900℃下退火,研究了退火温度对ZnO基陶瓷薄膜压敏性能的影响。结果表明,随着退火温度的升高,薄膜的压敏电压逐渐增大,非线性系数先增大后减小,漏电流密度先减小后增大。850℃退火处理后的薄膜具有较为理想的综合电性能,其非线性系数为14.93,压敏电压为4.82 V,漏电流密度为0.36μA/mm~2。
The ZnO-based ceramic thin films were grown on Si (111) substrate by RF magnetron sputtering and annealed at 650 ℃, 750 ℃, 850 ℃ and 900 ℃, respectively. The effects of annealing temperature on the piezoelectric properties of ZnO- influences. The results show that as the annealing temperature increases, the voltage of the thin film increases gradually, the nonlinear coefficient first increases and then decreases, and the leakage current density first decreases and then increases. The annealed film at 850 ℃ has an ideal composite electrical performance with a non - linear coefficient of 14.93, a voltage - sensitive voltage of 4.82 V and a leakage current density of 0.36 μA / mm ~ 2.