The Larger Grain and (111)-Orientation Planes of Poly-Ge Thin Film Grown on SiO<sub>2&

• 作 者: Shaoguang Dong Junhuo Zhuang Y
• 机 构: PhysicsandIlluminationDepartmentofFoshanUniversity
• 出 处: 材料科学与化学工程(英文)
• 发表日期: 2018年2期
• 关键词: Al-Induced Crystallization Poly-Ge Thin Film Diffusion Control INTERLAYER Lower

Al-induced crystallization yields the larger grain and (111)-orientation planes of poly-Ge thin film grown on SiO2 substrate, the (111)-orientation planes of poly-Ge thin film grown on SiO2 substrate are very important for the superior performance electro