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通过分子动力学模拟的方法对感应耦合等离子体刻蚀中Lag效应的产生机理进行了研究.研究结果表明,在刻蚀过程中普遍存在Lag效应,宽槽的刻蚀率明显比窄槽的刻蚀率要高,这是由于宽槽更有利于产物从槽中的逸出;窄槽中产物从槽中逸出的速率较低,较多的产物拥挤在窄槽中降低了入射的F等离子体入射的速度,从而降低了F等离子体到达Si表面的能量,而相同条件下,刻蚀率随能量的降低而降低;另一方面,窄槽中入射的等离子体与槽壁的距离较近,使得入射的F更容易与槽壁表面的Si的悬挂键结合沉积在槽壁表面,使刻蚀出的槽宽度变窄,进一步影响到后继粒子的入射;Lag效应随槽宽的减小而增强,随温度的升高而减弱,随入射粒子能量的升高而增强.
The mechanism of Lag effect in inductively coupled plasma etching was studied by molecular dynamics simulation.The results show that Lag effect is common during the etching process and the etching rate of wide-groove is obviously higher than that of the narrow-groove The eclipse rate is higher because the wide trenches are more conducive to product escape from the trenches; the rate at which products in the narrow trenches escape from the trenches is lower, and more product crowding in the narrow trenches reduces the incident F plasma The incident rate decreases, and the energy of F plasma reaches Si surface decreases. Under the same conditions, the etching rate decreases with the decrease of energy. On the other hand, the distance between the incident plasma and the groove wall is relatively close So that incident F can be more easily deposited on the surface of the groove wall by the dangling bonds of Si on the surface of the groove wall to narrow the groove width etched and further affect the incidence of subsequent particles. With the decrease of the groove width Increase, decrease with increasing temperature, and increase with the energy of incident particles.